Compare Infineon Technologies – IPD50N04S408ATMA1 vs Infineon Technologies – IPD088N06N3GBTMA1 Specifications

IPD50N04S408ATMA1 IPD088N06N3GBTMA1
Model Number
IPD50N04S408ATMA1 IPD088N06N3GBTMA1
Model Name
Infineon Technologies IPD50N04S408ATMA1 Infineon Technologies IPD088N06N3GBTMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS 60V 50A 8.8mΩ@50A,10V 71W 4V@34uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.600 grams / 0.021164 oz 1.030 grams / 0.036332 oz
Package / Case
TO-252-3-313 TO-252-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 60V
Continuous Drain Current (Id)
50A 50A
Drain Source On Resistance (RDS(on)@Vgs,Id)
7.9mΩ@50A,10V 8.8mΩ@50A,10V
Power Dissipation (Pd)
46W 71W
Gate Threshold Voltage (Vgs(th)@Id)
4V@17uA 4V@34uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
1.78nF@6V 3.9nF@30V
Total Gate Charge (Qg@Vgs)
22.4nC@10V 48nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

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