Compare Infineon Technologies – IPD50N04S408ATMA1 vs Infineon Technologies – IPD60R600P6 Specifications

IPD50N04S408ATMA1 IPD60R600P6
Model Number
IPD50N04S408ATMA1 IPD60R600P6
Model Name
Infineon Technologies IPD50N04S408ATMA1 Infineon Technologies IPD60R600P6
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS 600V 7.3A 600mΩ@10V,2.4A 63W 4.5V@200uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.600 grams / 0.021164 oz 0.481 grams / 0.016967 oz
Package / Case
TO-252-3-313 TO-252-2(DPAK)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
40V 600V
Continuous Drain Current (Id)
50A 7.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)
7.9mΩ@50A,10V 600mΩ@10V,2.4A
Power Dissipation (Pd)
46W 63W
Gate Threshold Voltage (Vgs(th)@Id)
4V@17uA 4.5V@200uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
1.78nF@6V N/A
Total Gate Charge (Qg@Vgs)
22.4nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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