Model Number |
IPD50N04S408ATMA1 |
IPG20N06S2L65ATMA1 |
Model Name |
Infineon Technologies IPD50N04S408ATMA1 |
Infineon Technologies IPG20N06S2L65ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS |
55V 20A 43W 65mΩ@15A,10V 2V@14uA 2 N-Channel TDSON-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.600 grams / 0.021164 oz |
0.355 grams / 0.012522 oz |
Package / Case |
TO-252-3-313 |
TDSON-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
40V |
55V |
Continuous Drain Current (Id) |
50A |
20A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
7.9mΩ@50A,10V |
65mΩ@15A,10V |
Power Dissipation (Pd) |
46W |
43W |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@17uA |
2V@14uA |
Type |
1PCSNChannel |
2 N-Channel |
Input Capacitance (Ciss@Vds) |
1.78nF@6V |
410pF@25V |
Total Gate Charge (Qg@Vgs) |
22.4nC@10V |
12nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |