Model Number |
IPD50N04S408ATMA1 |
IPI65R660CFD |
Model Name |
Infineon Technologies IPD50N04S408ATMA1 |
Infineon Technologies IPI65R660CFD |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS |
650V 6A 660mΩ@2.1A,10V 62.5W 4.5V@200uA 1PCSNChannel TO-262-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.600 grams / 0.021164 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-252-3-313 |
TO-262-3 |
Package / Arrange |
Tape & Reel (TR) |
Bag-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
40V |
650V |
Continuous Drain Current (Id) |
50A |
6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
7.9mΩ@50A,10V |
660mΩ@2.1A,10V |
Power Dissipation (Pd) |
46W |
62.5W |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@17uA |
4.5V@200uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.78nF@6V |
615pF@100V |
Total Gate Charge (Qg@Vgs) |
22.4nC@10V |
22nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |