Compare Infineon Technologies – IPD50N04S408ATMA1 vs Infineon Technologies – IPP083N10N5 Specifications

IPD50N04S408ATMA1 IPP083N10N5
Model Number
IPD50N04S408ATMA1 IPP083N10N5
Model Name
Infineon Technologies IPD50N04S408ATMA1 Infineon Technologies IPP083N10N5
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS 100V 73A 100W 8.3mΩ@10V,73A 3.8V@49uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.600 grams / 0.021164 oz 1.000 grams / 0.035274 oz
Package / Case
TO-252-3-313 TO-220-3
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
40V 100V
Continuous Drain Current (Id)
50A 73A
Drain Source On Resistance (RDS(on)@Vgs,Id)
7.9mΩ@50A,10V 8.3mΩ@10V,73A
Power Dissipation (Pd)
46W 100W
Gate Threshold Voltage (Vgs(th)@Id)
4V@17uA 3.8V@49uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
1.78nF@6V N/A
Total Gate Charge (Qg@Vgs)
22.4nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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