Compare Infineon Technologies – IPD50N04S408ATMA1 vs Infineon Technologies – IRFI4212H-117P Specifications

IPD50N04S408ATMA1 IRFI4212H-117P
Model Number
IPD50N04S408ATMA1 IRFI4212H-117P
Model Name
Infineon Technologies IPD50N04S408ATMA1 Infineon Technologies IRFI4212H-117P
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS 100V 11A 72.5mΩ@10V,6.6A 18W 5V@250uA 2 N-Channel TO-220F-5(Forming) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.600 grams / 0.021164 oz 3.520 grams / 0.124164 oz
Package / Case
TO-252-3-313 TO-220F-5(Forming)
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 100V
Continuous Drain Current (Id)
50A 11A
Drain Source On Resistance (RDS(on)@Vgs,Id)
7.9mΩ@50A,10V 72.5mΩ@10V,6.6A
Power Dissipation (Pd)
46W 18W
Gate Threshold Voltage (Vgs(th)@Id)
4V@17uA 5V@250uA
Type
1PCSNChannel 2 N-Channel
Input Capacitance (Ciss@Vds)
1.78nF@6V N/A
Total Gate Charge (Qg@Vgs)
22.4nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

Compare Infineon Technologies - IPD50N04S408ATMA1 With Other 200 Models

Scroll to Top