Compare Infineon Technologies – IPD80R1K4P7ATMA1 vs Infineon Technologies – BSS308PEH6327 Specifications

IPD80R1K4P7ATMA1 BSS308PEH6327
Model Number
IPD80R1K4P7ATMA1 BSS308PEH6327
Model Name
Infineon Technologies IPD80R1K4P7ATMA1 Infineon Technologies BSS308PEH6327
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS 30V 2A 500mW 80mΩ@10V,2A 2V@11uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.700 grams / 0.024692 oz 0.056 grams / 0.001975 oz
Package / Case
TO-252-2 SOT-23
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
800V 30V
Continuous Drain Current (Id)
4A 2A
Power Dissipation (Pd)
32W 500mW
Drain Source On Resistance (RDS(on)@Vgs,Id)
1.4Ω@1.4A,10V 80mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@700uA 2V@11uA
Type
1PCSNChannel 1PCSPChannel
Input Capacitance (Ciss@Vds)
250pF@500V N/A
Total Gate Charge (Qg@Vgs)
10nC@10V N/A
Operating Temperature
-55℃~+150℃@(Tj) N/A

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