Model Number |
IPD80R1K4P7ATMA1 |
BSS606NH6327 |
Model Name |
Infineon Technologies IPD80R1K4P7ATMA1 |
Infineon Technologies BSS606NH6327 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
60V 3.2A 60mΩ@10V,3.2A 1W 2.3V@15uA 1PCSNChannel SOT-89-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.700 grams / 0.024692 oz |
0.140 grams / 0.004938 oz |
Package / Case |
TO-252-2 |
SOT-89-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
800V |
60V |
Continuous Drain Current (Id) |
4A |
3.2A |
Power Dissipation (Pd) |
32W |
1W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
1.4Ω@1.4A,10V |
60mΩ@10V,3.2A |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@700uA |
2.3V@15uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
250pF@500V |
N/A |
Total Gate Charge (Qg@Vgs) |
10nC@10V |
N/A |
Operating Temperature |
-55℃~+150℃@(Tj) |
N/A |