Compare Infineon Technologies – IPD80R1K4P7ATMA1 vs Infineon Technologies – IPA50R299CPXKSA1079 Specifications

IPD80R1K4P7ATMA1 IPA50R299CPXKSA1079
Model Number
IPD80R1K4P7ATMA1 IPA50R299CPXKSA1079
Model Name
Infineon Technologies IPD80R1K4P7ATMA1 Infineon Technologies IPA50R299CPXKSA1079
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS 500V 12A 104W 299mΩ@6.6A,10V 3.5V@440uA 1PCSNChannel TO-220-3-31 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.700 grams / 0.024692 oz 1.000 grams / 0.035274 oz
Package / Case
TO-252-2 TO-220-3-31
Package / Arrange
Tape & Reel (TR) Bag-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
800V 500V
Continuous Drain Current (Id)
4A 12A
Power Dissipation (Pd)
32W 104W
Drain Source On Resistance (RDS(on)@Vgs,Id)
1.4Ω@1.4A,10V 299mΩ@6.6A,10V
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@700uA 3.5V@440uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
250pF@500V 1.19nF@100V
Total Gate Charge (Qg@Vgs)
10nC@10V 31nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+150℃@(Tj)

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