Compare Infineon Technologies – IPD80R1K4P7ATMA1 vs Infineon Technologies – IPA80R1K4CEXKSA2 Specifications

IPD80R1K4P7ATMA1 IPA80R1K4CEXKSA2
Model Number
IPD80R1K4P7ATMA1 IPA80R1K4CEXKSA2
Model Name
Infineon Technologies IPD80R1K4P7ATMA1 Infineon Technologies IPA80R1K4CEXKSA2
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS 800V 3.9A 1.4Ω@2.3A,10V 31W 3.9V@240uA 1PCSNChannel TO-220-FP MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.700 grams / 0.024692 oz 3.257 grams / 0.114887 oz
Package / Case
TO-252-2 TO-220-FP
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
800V 800V
Continuous Drain Current (Id)
4A 3.9A
Power Dissipation (Pd)
32W 31W
Drain Source On Resistance (RDS(on)@Vgs,Id)
1.4Ω@1.4A,10V 1.4Ω@2.3A,10V
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@700uA 3.9V@240uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
250pF@500V 570pF@100V
Total Gate Charge (Qg@Vgs)
10nC@10V 23nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -40℃~+150℃@(Tj)

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