Compare Infineon Technologies – IPD80R1K4P7ATMA1 vs Infineon Technologies – IPP126N10N3 G Specifications

IPD80R1K4P7ATMA1 IPP126N10N3 G
Model Number
IPD80R1K4P7ATMA1 IPP126N10N3 G
Model Name
Infineon Technologies IPD80R1K4P7ATMA1 Infineon Technologies IPP126N10N3 G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS 100V 58A 12.6mΩ@46A,10V 94W 3.5V@46uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.700 grams / 0.024692 oz 1.000 grams / 0.035274 oz
Package / Case
TO-252-2 TO-220-3
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
800V 100V
Continuous Drain Current (Id)
4A 58A
Power Dissipation (Pd)
32W 94W
Drain Source On Resistance (RDS(on)@Vgs,Id)
1.4Ω@1.4A,10V 12.6mΩ@46A,10V
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@700uA 3.5V@46uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
250pF@500V 2.5nF@50V
Total Gate Charge (Qg@Vgs)
10nC@10V 35nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+175℃@(Tj)

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