Model Number |
IPD80R1K4P7ATMA1 |
IPW50R350CP |
Model Name |
Infineon Technologies IPD80R1K4P7ATMA1 |
Infineon Technologies IPW50R350CP |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
500V 10A 350mΩ@5.6A,10V 89W 3.5V@370uA 1PCSNChannel TO-247-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.700 grams / 0.024692 oz |
8.550 grams / 0.301593 oz |
Package / Case |
TO-252-2 |
TO-247-3 |
Package / Arrange |
Tape & Reel (TR) |
Bag-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
800V |
500V |
Continuous Drain Current (Id) |
4A |
10A |
Power Dissipation (Pd) |
32W |
89W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
1.4Ω@1.4A,10V |
350mΩ@5.6A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@700uA |
3.5V@370uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
250pF@500V |
1.02nF@100V |
Total Gate Charge (Qg@Vgs) |
10nC@10V |
25nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |