Compare Infineon Technologies – IPD80R1K4P7ATMA1 vs Infineon Technologies – IRF40H210 Specifications

IPD80R1K4P7ATMA1 IRF40H210
Model Number
IPD80R1K4P7ATMA1 IRF40H210
Model Name
Infineon Technologies IPD80R1K4P7ATMA1 Infineon Technologies IRF40H210
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS 40V 100A 1.7mΩ@10V,100A 125W 3.7V@150uA 1PCSNChannel PQFN-8(4.9x5.8) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.700 grams / 0.024692 oz 0.200 grams / 0.007055 oz
Package / Case
TO-252-2 PQFN-8(4.9x5.8)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
800V 40V
Continuous Drain Current (Id)
4A 100A
Power Dissipation (Pd)
32W 125W
Drain Source On Resistance (RDS(on)@Vgs,Id)
1.4Ω@1.4A,10V 1.7mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@700uA 3.7V@150uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
250pF@500V N/A
Total Gate Charge (Qg@Vgs)
10nC@10V N/A
Operating Temperature
-55℃~+150℃@(Tj) N/A

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