| Model Number |
| IPD80R1K4P7ATMA1 |
IRF7341GTRPBF |
| Model Name |
| Infineon Technologies IPD80R1K4P7ATMA1 |
Infineon Technologies IRF7341GTRPBF |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
55V 5.1A 50mΩ@5.1A,10V 2.4W 1V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.700 grams / 0.024692 oz |
0.130 grams / 0.004586 oz |
| Package / Case |
| TO-252-2 |
SOIC-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 800V |
55V |
| Continuous Drain Current (Id) |
| 4A |
5.1A |
| Power Dissipation (Pd) |
| 32W |
2.4W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 1.4Ω@1.4A,10V |
50mΩ@5.1A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3.5V@700uA |
1V@250uA |
| Type |
| 1PCSNChannel |
2 N-Channel |
| Input Capacitance (Ciss@Vds) |
| 250pF@500V |
780pF@25V |
| Total Gate Charge (Qg@Vgs) |
| 10nC@10V |
44nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
