Model Number |
IPD80R1K4P7ATMA1 |
IRFP4137PBF |
Model Name |
Infineon Technologies IPD80R1K4P7ATMA1 |
Infineon Technologies IRFP4137PBF |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
800V 4A 32W 1.4Ω@1.4A,10V 3.5V@700uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
300V 38A 69mΩ@24A,10V 341W 5V@250uA 1PCSNChannel TO-247-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.700 grams / 0.024692 oz |
7.900 grams / 0.278665 oz |
Package / Case |
TO-252-2 |
TO-247-3 |
Package / Arrange |
Tape & Reel (TR) |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
800V |
300V |
Continuous Drain Current (Id) |
4A |
38A |
Power Dissipation (Pd) |
32W |
341W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
1.4Ω@1.4A,10V |
69mΩ@24A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@700uA |
5V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
250pF@500V |
5.168nF@50V |
Total Gate Charge (Qg@Vgs) |
10nC@10V |
125nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |