Compare Infineon Technologies – IPD90P03P404ATMA2 vs Infineon Technologies – IPP100N08N3 G Specifications

IPD90P03P404ATMA2 IPP100N08N3 G
Model Number
IPD90P03P404ATMA2 IPP100N08N3 G
Model Name
Infineon Technologies IPD90P03P404ATMA2 Infineon Technologies IPP100N08N3 G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 90A 4.5mΩ@90A,10V 137W 4V@253uA 1PCSPChannel TO-252 MOSFETs ROHS 80V 70A 100W 10mΩ@10V,46A 3.5V@46uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-252 TO-220-3
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
30V 80V
Continuous Drain Current (Id)
90A 70A
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.5mΩ@90A,10V 10mΩ@10V,46A
Power Dissipation (Pd)
137W 100W
Gate Threshold Voltage (Vgs(th)@Id)
4V@253uA 3.5V@46uA
Type
1PCSPChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
10.3nF@25V N/A
Total Gate Charge (Qg@Vgs)
130nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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