| Model Number |
| IPD95R1K2P7 |
IPB80N06S209ATMA2 |
| Model Name |
| Infineon Technologies IPD95R1K2P7 |
Infineon Technologies IPB80N06S209ATMA2 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-252-3 MOSFETs ROHS |
55V 80A 8.8mΩ@50A,10V 190W 4V@125uA 1PCSNChannel TO-263 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-252-3 |
TO-263 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
55V |
| Continuous Drain Current (Id) |
| - |
80A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
8.8mΩ@50A,10V |
| Power Dissipation (Pd) |
| - |
190W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
4V@125uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
2.36nF@25V |
| Total Gate Charge (Qg@Vgs) |
| - |
80nC@10V |
