| Model Number |
| IPD95R1K2P7 |
IPL65R650C6SATMA1 |
| Model Name |
| Infineon Technologies IPD95R1K2P7 |
Infineon Technologies IPL65R650C6SATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-252-3 MOSFETs ROHS |
650V 6.7A 56.8W 650mΩ@2.1A,10V 3.5V@210uA 1PCSNChannel TSON-8-EP(5x6) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-252-3 |
TSON-8-EP(5x6) |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
650V |
| Continuous Drain Current (Id) |
| - |
6.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
650mΩ@2.1A,10V |
| Power Dissipation (Pd) |
| - |
56.8W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
3.5V@210uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
440pF@100V |
| Total Gate Charge (Qg@Vgs) |
| - |
21nC@10V |
