| Model Number |
| IPD95R1K2P7 |
SPW21N50C3 |
| Model Name |
| Infineon Technologies IPD95R1K2P7 |
Infineon Technologies SPW21N50C3 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-252-3 MOSFETs ROHS |
560V 21A 208W 190mΩ@10V,13.1A 3.9V@1mA 1PCSNChannel TO-247-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
7.160 grams / 0.252562 oz |
| Package / Case |
| TO-252-3 |
TO-247-3 |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| - |
- |
| Drain Source Voltage (Vdss) |
| - |
560V |
| Continuous Drain Current (Id) |
| - |
21A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
190mΩ@10V,13.1A |
| Power Dissipation (Pd) |
| - |
208W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
3.9V@1mA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
N/A |
| Total Gate Charge (Qg@Vgs) |
| - |
N/A |
