Model Number |
IPG16N10S461ATMA1 |
BSO303P |
Model Name |
Infineon Technologies IPG16N10S461ATMA1 |
Infineon Technologies BSO303P |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 16A 61mΩ@16A,10V 29W 3.5V@9uA 2 N-Channel TDSON-8 MOSFETs ROHS |
30V 8.2A 2W 21mΩ@8.2A,10V 2V@100uA 2 P-Channel SOIC-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.145 grams / 0.005115 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TDSON-8 |
SOIC-8 |
Package / Arrange |
Tape & Reel (TR) |
Bag-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
30V |
Continuous Drain Current (Id) |
16A |
8.2A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
61mΩ@16A,10V |
21mΩ@8.2A,10V |
Power Dissipation (Pd) |
29W |
2W |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@9uA |
2V@100uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
2 N-Channel |
2 P-Channel |
Input Capacitance (Ciss@Vds) |
490pF@25V |
1.761nF@25V |
Total Gate Charge (Qg@Vgs) |
7nC@10V |
72.5nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |