Compare Infineon Technologies – IPG16N10S461ATMA1 vs Infineon Technologies – BSS225 H6327 Specifications

IPG16N10S461ATMA1 BSS225 H6327
Model Number
IPG16N10S461ATMA1 BSS225 H6327
Model Name
Infineon Technologies IPG16N10S461ATMA1 Infineon Technologies BSS225 H6327
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
100V 16A 61mΩ@16A,10V 29W 3.5V@9uA 2 N-Channel TDSON-8 MOSFETs ROHS 600V 90mA 45Ω@4.5V,90mA 1W 2.3V@94uA 1PCSNChannel SOT-89 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.145 grams / 0.005115 oz 0.125 grams / 0.004409 oz
Package / Case
TDSON-8 SOT-89
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
100V 600V
Continuous Drain Current (Id)
16A 90mA
Drain Source On Resistance (RDS(on)@Vgs,Id)
61mΩ@16A,10V 45Ω@4.5V,90mA
Power Dissipation (Pd)
29W 1W
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@9uA 2.3V@94uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
2 N-Channel 1PCSNChannel
Input Capacitance (Ciss@Vds)
490pF@25V N/A
Total Gate Charge (Qg@Vgs)
7nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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