Model Number |
IPG16N10S461ATMA1 |
BSS83P H6327 |
Model Name |
Infineon Technologies IPG16N10S461ATMA1 |
Infineon Technologies BSS83P H6327 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 16A 61mΩ@16A,10V 29W 3.5V@9uA 2 N-Channel TDSON-8 MOSFETs ROHS |
60V 330mA 2Ω@10V,330mA 360mW 2V@80uA P Channel PG-SOT-23-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.145 grams / 0.005115 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TDSON-8 |
PG-SOT-23-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
100V |
60V |
Continuous Drain Current (Id) |
16A |
330mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
61mΩ@16A,10V |
2Ω@10V,330mA |
Power Dissipation (Pd) |
29W |
360mW |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@9uA |
2V@80uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
2 N-Channel |
P Channel |
Input Capacitance (Ciss@Vds) |
490pF@25V |
N/A |
Total Gate Charge (Qg@Vgs) |
7nC@10V |
N/A |
Operating Temperature |
-55℃~+175℃@(Tj) |
N/A |