| Model Number |
| IPG16N10S461ATMA1 |
BSZ110N06NS3GATMA1 |
| Model Name |
| Infineon Technologies IPG16N10S461ATMA1 |
Infineon Technologies BSZ110N06NS3GATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 100V 16A 61mΩ@16A,10V 29W 3.5V@9uA 2 N-Channel TDSON-8 MOSFETs ROHS |
60V 20A 11mΩ@20A,10V 4V@23uA 1PCSNChannel TSDSON-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.145 grams / 0.005115 oz |
0.070 grams / 0.002469 oz |
| Package / Case |
| TDSON-8 |
TSDSON-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 100V |
60V |
| Continuous Drain Current (Id) |
| 16A |
20A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 61mΩ@16A,10V |
11mΩ@20A,10V |
| Power Dissipation (Pd) |
| 29W |
2.1W;50W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3.5V@9uA |
4V@23uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| 2 N-Channel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 490pF@25V |
2.7nF@30V |
| Total Gate Charge (Qg@Vgs) |
| 7nC@10V |
33nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |
