Compare Infineon Technologies – IPG16N10S461ATMA1 vs Infineon Technologies – IPB025N08N3 G Specifications

IPG16N10S461ATMA1 IPB025N08N3 G
Model Number
IPG16N10S461ATMA1 IPB025N08N3 G
Model Name
Infineon Technologies IPG16N10S461ATMA1 Infineon Technologies IPB025N08N3 G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
100V 16A 61mΩ@16A,10V 29W 3.5V@9uA 2 N-Channel TDSON-8 MOSFETs ROHS 80V 120A 2.5mΩ@100A,10V 300W 3.5V@270uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.145 grams / 0.005115 oz 1.000 grams / 0.035274 oz
Package / Case
TDSON-8 TO-263
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
100V 80V
Continuous Drain Current (Id)
16A 120A
Drain Source On Resistance (RDS(on)@Vgs,Id)
61mΩ@16A,10V 2.5mΩ@100A,10V
Power Dissipation (Pd)
29W 300W
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@9uA 3.5V@270uA
Reverse Transfer Capacitance (Crss@Vds)
- -
Type
2 N-Channel 1PCSNChannel
Input Capacitance (Ciss@Vds)
490pF@25V 14.2nF@40V
Total Gate Charge (Qg@Vgs)
7nC@10V 206nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

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