Model Number |
IPG16N10S461ATMA1 |
IPD50N08S413ATMA1 |
Model Name |
Infineon Technologies IPG16N10S461ATMA1 |
Infineon Technologies IPD50N08S413ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 16A 61mΩ@16A,10V 29W 3.5V@9uA 2 N-Channel TDSON-8 MOSFETs ROHS |
80V 50A 13.2mΩ@50A,10V 72W 4V@33uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.145 grams / 0.005115 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TDSON-8 |
TO-252-3-313 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
80V |
Continuous Drain Current (Id) |
16A |
50A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
61mΩ@16A,10V |
13.2mΩ@50A,10V |
Power Dissipation (Pd) |
29W |
72W |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@9uA |
4V@33uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
2 N-Channel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
490pF@25V |
1.711nF@25V |
Total Gate Charge (Qg@Vgs) |
7nC@10V |
30nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |