Compare Infineon Technologies – IPG16N10S461ATMA1 vs Infineon Technologies – ISZ0804NLSATMA1 Specifications

IPG16N10S461ATMA1 ISZ0804NLSATMA1
Model Number
IPG16N10S461ATMA1 ISZ0804NLSATMA1
Model Name
Infineon Technologies IPG16N10S461ATMA1 Infineon Technologies ISZ0804NLSATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
100V 16A 61mΩ@16A,10V 29W 3.5V@9uA 2 N-Channel TDSON-8 MOSFETs ROHS 100V 11.5mΩ@20A,10V 2.3V@28uA 1PCSNChannel TSDSON-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.145 grams / 0.005115 oz 0.180 grams / 0.006349 oz
Package / Case
TDSON-8 TSDSON-8
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
100V 100V
Continuous Drain Current (Id)
16A 11A;58A
Drain Source On Resistance (RDS(on)@Vgs,Id)
61mΩ@16A,10V 11.5mΩ@20A,10V
Power Dissipation (Pd)
29W 2.1W;60W
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@9uA 2.3V@28uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
2 N-Channel 1PCSNChannel
Input Capacitance (Ciss@Vds)
490pF@25V 1.6nF@50V
Total Gate Charge (Qg@Vgs)
7nC@10V 24nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

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