| Model Number |
| IPG20N04S4-12 |
BSZ086P03NS3EGATMA1 |
| Model Name |
| Infineon Technologies IPG20N04S4-12 |
Infineon Technologies BSZ086P03NS3EGATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TDSON-8 MOSFETs ROHS |
30V 8.6mΩ@20A,10V 3.1V@105uA 1PCSPChannel TSDSON-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.070 grams / 0.002469 oz |
| Package / Case |
| TDSON-8 |
TSDSON-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
30V |
| Continuous Drain Current (Id) |
| - |
13.5A;40A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
8.6mΩ@20A,10V |
| Power Dissipation (Pd) |
| - |
2.1W;69W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
3.1V@105uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSPChannel |
| Input Capacitance (Ciss@Vds) |
| - |
4.785nF@15V |
| Total Gate Charge (Qg@Vgs) |
| - |
57.5nC@10V |
