Model Number |
IPG20N04S4-12 |
IPB60R099P7ATMA1 |
Model Name |
Infineon Technologies IPG20N04S4-12 |
Infineon Technologies IPB60R099P7ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
TDSON-8 MOSFETs ROHS |
650V 31A 117W 99mΩ@10.5A,10V 4V@530uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
2.440 grams / 0.086069 oz |
Package / Case |
TDSON-8 |
TO-263-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
- |
EAR99 |
Drain Source Voltage (Vdss) |
- |
650V |
Continuous Drain Current (Id) |
- |
31A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
- |
99mΩ@10.5A,10V |
Power Dissipation (Pd) |
- |
117W |
Gate Threshold Voltage (Vgs(th)@Id) |
- |
4V@530uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
- |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
- |
1.952nF@400V |
Total Gate Charge (Qg@Vgs) |
- |
45nC@10V |