Compare Infineon Technologies – IPG20N04S4-12 vs Infineon Technologies – IPI110N20N3 G Specifications

IPG20N04S4-12 IPI110N20N3 G
Model Number
IPG20N04S4-12 IPI110N20N3 G
Model Name
Infineon Technologies IPG20N04S4-12 Infineon Technologies IPI110N20N3 G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TDSON-8 MOSFETs ROHS 200V 88A 9.9mΩ@10V,88A 300W 3V@270uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TDSON-8 TO-262-3
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
- -
Drain Source Voltage (Vdss)
- 200V
Continuous Drain Current (Id)
- 88A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 9.9mΩ@10V,88A
Power Dissipation (Pd)
- 300W
Gate Threshold Voltage (Vgs(th)@Id)
- 3V@270uA
Reverse Transfer Capacitance (Crss@Vds)
- 5pF@100V
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- 5.34nF@100v
Total Gate Charge (Qg@Vgs)
- 65nC@0~10V

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