Compare Infineon Technologies – IPG20N06S2L-35 vs Infineon Technologies – IPB017N08N5ATMA1 Specifications

IPG20N06S2L-35 IPB017N08N5ATMA1
Model Number
IPG20N06S2L-35 IPB017N08N5ATMA1
Model Name
Infineon Technologies IPG20N06S2L-35 Infineon Technologies IPB017N08N5ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TDSON-8 MOSFETs ROHS 80V 120A 1.7mΩ@100A,10V 375W 3.8V@280uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.197 grams / 0.006949 oz 1.900 grams / 0.067021 oz
Package / Case
TDSON-8 TO-263-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
- 80V
Continuous Drain Current (Id)
- 120A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 1.7mΩ@100A,10V
Power Dissipation (Pd)
- 375W
Gate Threshold Voltage (Vgs(th)@Id)
- 3.8V@280uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- 16.9nF@40V
Total Gate Charge (Qg@Vgs)
- 223nC@10V

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