Compare Infineon Technologies – IPG20N06S2L-35 vs Infineon Technologies – IPB200N25N3 G Specifications

IPG20N06S2L-35 IPB200N25N3 G
Model Number
IPG20N06S2L-35 IPB200N25N3 G
Model Name
Infineon Technologies IPG20N06S2L-35 Infineon Technologies IPB200N25N3 G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TDSON-8 MOSFETs ROHS 250V 64A 300W 20mΩ@10V,64A 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.197 grams / 0.006949 oz 1.970 grams / 0.06949 oz
Package / Case
TDSON-8 TO-263-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
- 250V
Continuous Drain Current (Id)
- 64A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 20mΩ@10V,64A
Power Dissipation (Pd)
- 300W
Gate Threshold Voltage (Vgs(th)@Id)
- 4V@270uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- N/A
Total Gate Charge (Qg@Vgs)
- N/A

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