Model Number |
IPG20N06S2L-35 |
IPD50N10S3L16ATMA1 |
Model Name |
Infineon Technologies IPG20N06S2L-35 |
Infineon Technologies IPD50N10S3L16ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
TDSON-8 MOSFETs ROHS |
100V 50A 100W 15mΩ@50A,10V 2.4V@60uA 1PCSNChannel TO-252 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.197 grams / 0.006949 oz |
0.800 grams / 0.028219 oz |
Package / Case |
TDSON-8 |
TO-252 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
- |
100V |
Continuous Drain Current (Id) |
- |
50A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
- |
15mΩ@50A,10V |
Power Dissipation (Pd) |
- |
100W |
Gate Threshold Voltage (Vgs(th)@Id) |
- |
2.4V@60uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
- |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
- |
4.18nF@25V |
Total Gate Charge (Qg@Vgs) |
- |
64nC@10V |