Compare Infineon Technologies – IPG20N06S2L-35 vs Infineon Technologies – IPD50R800CEAUMA1 Specifications

IPG20N06S2L-35 IPD50R800CEAUMA1
Model Number
IPG20N06S2L-35 IPD50R800CEAUMA1
Model Name
Infineon Technologies IPG20N06S2L-35 Infineon Technologies IPD50R800CEAUMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TDSON-8 MOSFETs ROHS 500V 7.6A 60W 800mΩ@1.5A,13V 3.5V@130uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.197 grams / 0.006949 oz 1.000 grams / 0.035274 oz
Package / Case
TDSON-8 TO-252-2
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
- 500V
Continuous Drain Current (Id)
- 7.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 800mΩ@1.5A,13V
Power Dissipation (Pd)
- 60W
Gate Threshold Voltage (Vgs(th)@Id)
- 3.5V@130uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- 280pF@100V
Total Gate Charge (Qg@Vgs)
- 12.4nC@10V

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