Compare Infineon Technologies – IPG20N06S2L-35 vs Infineon Technologies – IPD80R1K2P7ATMA1 Specifications

IPG20N06S2L-35 IPD80R1K2P7ATMA1
Model Number
IPG20N06S2L-35 IPD80R1K2P7ATMA1
Model Name
Infineon Technologies IPG20N06S2L-35 Infineon Technologies IPD80R1K2P7ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TDSON-8 MOSFETs ROHS 800V 4.5A 37W 1.2Ω@1.7A,10V 3.5V@80uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.197 grams / 0.006949 oz 0.483 grams / 0.017037 oz
Package / Case
TDSON-8 TO-252-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
- 800V
Continuous Drain Current (Id)
- 4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 1.2Ω@1.7A,10V
Power Dissipation (Pd)
- 37W
Gate Threshold Voltage (Vgs(th)@Id)
- 3.5V@80uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- 300pF@500V
Total Gate Charge (Qg@Vgs)
- 11nC@10V

Compare Infineon Technologies - IPG20N06S2L-35 With Other 200 Models

Scroll to Top