| Model Number |
| IPG20N06S2L-35 |
SPD04N80C3ATMA1 |
| Model Name |
| Infineon Technologies IPG20N06S2L-35 |
Infineon Technologies SPD04N80C3ATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TDSON-8 MOSFETs ROHS |
800V 4A 63W 1.3Ω@2.5A,10V 3.9V@240uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.197 grams / 0.006949 oz |
0.380 grams / 0.013404 oz |
| Package / Case |
| TDSON-8 |
TO-252-3 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
800V |
| Continuous Drain Current (Id) |
| - |
4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
1.3Ω@2.5A,10V |
| Power Dissipation (Pd) |
| - |
63W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
3.9V@240uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
570pF@100V |
| Total Gate Charge (Qg@Vgs) |
| - |
31nC@10V |
