| Model Number |
| IPG20N06S2L-35 |
SPI11N60C3XKSA1 |
| Model Name |
| Infineon Technologies IPG20N06S2L-35 |
Infineon Technologies SPI11N60C3XKSA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TDSON-8 MOSFETs ROHS |
650V 11A 125W 380mΩ@7A,10V 3.9V@500uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.197 grams / 0.006949 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TDSON-8 |
TO-262-3-1 |
| Package / Arrange |
| Tape & Reel (TR) |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
650V |
| Continuous Drain Current (Id) |
| - |
11A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
380mΩ@7A,10V |
| Power Dissipation (Pd) |
| - |
125W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
3.9V@500uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
1.2nF@25V |
| Total Gate Charge (Qg@Vgs) |
| - |
60nC@10V |
