Compare Infineon Technologies – IPG20N06S4L-11 vs Infineon Technologies – IPB030N08N3 G Specifications

IPG20N06S4L-11 IPB030N08N3 G
Model Number
IPG20N06S4L-11 IPB030N08N3 G
Model Name
Infineon Technologies IPG20N06S4L-11 Infineon Technologies IPB030N08N3 G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TDSON-8 MOSFETs ROHS 80V 160A 2.5mΩ@10V,100mA 214W 2.8V@155uA 1PCSNChannel TO-263-7 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TDSON-8 TO-263-7
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
- -
Drain Source Voltage (Vdss)
- 80V
Continuous Drain Current (Id)
- 160A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 2.5mΩ@10V,100mA
Power Dissipation (Pd)
- 214W
Gate Threshold Voltage (Vgs(th)@Id)
- 2.8V@155uA
Reverse Transfer Capacitance (Crss@Vds)
- 59pF@40V
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- 6.1nF@40V
Total Gate Charge (Qg@Vgs)
- 88nC@0~10V

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