Compare Infineon Technologies – IPG20N06S4L-11 vs Infineon Technologies – IPD12CN10N Specifications

IPG20N06S4L-11 IPD12CN10N
Model Number
IPG20N06S4L-11 IPD12CN10N
Model Name
Infineon Technologies IPG20N06S4L-11 Infineon Technologies IPD12CN10N
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TDSON-8 MOSFETs ROHS 100V 67A 12.4mΩ@10V,67A 125W 4V@83uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TDSON-8 TO-252-3-313
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
- EAR99
Drain Source Voltage (Vdss)
- 100V
Continuous Drain Current (Id)
- 67A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 12.4mΩ@10V,67A
Power Dissipation (Pd)
- 125W
Gate Threshold Voltage (Vgs(th)@Id)
- 4V@83uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- 4.32nF@50V
Total Gate Charge (Qg@Vgs)
- 65nC@10V

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