Compare Infineon Technologies – IPG20N06S4L-11 vs Infineon Technologies – IPD26N06S2L35ATMA2 Specifications

IPG20N06S4L-11 IPD26N06S2L35ATMA2
Model Number
IPG20N06S4L-11 IPD26N06S2L35ATMA2
Model Name
Infineon Technologies IPG20N06S4L-11 Infineon Technologies IPD26N06S2L35ATMA2
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TDSON-8 MOSFETs ROHS 55V 30A 68W 35mΩ@13A,10V 2V@26uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.800 grams / 0.028219 oz
Package / Case
TDSON-8 TO-252
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
- EAR99
Drain Source Voltage (Vdss)
- 55V
Continuous Drain Current (Id)
- 30A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 35mΩ@13A,10V
Power Dissipation (Pd)
- 68W
Gate Threshold Voltage (Vgs(th)@Id)
- 2V@26uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- 621pF@25V
Total Gate Charge (Qg@Vgs)
- 24nC@10V

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