Compare Infineon Technologies – IPG20N06S4L-11 vs Infineon Technologies – IPD30N10S3L34ATMA1 Specifications

IPG20N06S4L-11 IPD30N10S3L34ATMA1
Model Number
IPG20N06S4L-11 IPD30N10S3L34ATMA1
Model Name
Infineon Technologies IPG20N06S4L-11 Infineon Technologies IPD30N10S3L34ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TDSON-8 MOSFETs ROHS 100V 30A 31mΩ@10V,30A 57W 2.4V@29uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.481 grams / 0.016967 oz
Package / Case
TDSON-8 TO-252(DPAK)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
- EAR99
Drain Source Voltage (Vdss)
- 100V
Continuous Drain Current (Id)
- 30A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 31mΩ@10V,30A
Power Dissipation (Pd)
- 57W
Gate Threshold Voltage (Vgs(th)@Id)
- 2.4V@29uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- 1.976nF@25V
Total Gate Charge (Qg@Vgs)
- 31nC@10V

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