| Model Number |
| IPG20N06S4L-11 |
IPI50N10S3L16AKSA1 |
| Model Name |
| Infineon Technologies IPG20N06S4L-11 |
Infineon Technologies IPI50N10S3L16AKSA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TDSON-8 MOSFETs ROHS |
100V 50A 15.7mΩ@50A,10V 100W 2.4V@60uA 1PCSNChannel TO-262-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TDSON-8 |
TO-262-3 |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
100V |
| Continuous Drain Current (Id) |
| - |
50A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
15.7mΩ@50A,10V |
| Power Dissipation (Pd) |
| - |
100W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
2.4V@60uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
4.18nF@25V |
| Total Gate Charge (Qg@Vgs) |
| - |
64nC@10V |
