| Model Number |
| IPI032N06N3 G |
BSB056N10NN3 G |
| Model Name |
| Infineon Technologies IPI032N06N3 G |
Infineon Technologies BSB056N10NN3 G |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-262-3 MOSFETs ROHS |
100V 9A 5.6mΩ@10V,30A 2.8W 3.5V@100uA 1PCSNChannel MG-WDSON-2 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-262-3 |
MG-WDSON-2 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| - |
- |
| Drain Source Voltage (Vdss) |
| - |
100V |
| Continuous Drain Current (Id) |
| - |
9A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
5.6mΩ@10V,30A |
| Power Dissipation (Pd) |
| - |
2.8W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
3.5V@100uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
N/A |
| Total Gate Charge (Qg@Vgs) |
| - |
N/A |
