Model Number |
IPI032N06N3 G |
BSO080P03SHXUMA1 |
Model Name |
Infineon Technologies IPI032N06N3 G |
Infineon Technologies BSO080P03SHXUMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
TO-262-3 MOSFETs ROHS |
30V 12.6A 8mΩ@14.9A,10V 1.79W 2.2V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-262-3 |
SOIC-8 |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
- |
EAR99 |
Drain Source Voltage (Vdss) |
- |
30V |
Continuous Drain Current (Id) |
- |
12.6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
- |
8mΩ@14.9A,10V |
Power Dissipation (Pd) |
- |
1.79W |
Gate Threshold Voltage (Vgs(th)@Id) |
- |
2.2V@250uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
- |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
- |
5.89nF@25V |
Total Gate Charge (Qg@Vgs) |
- |
136nC@10V |