Compare Infineon Technologies – IPI032N06N3 G vs Infineon Technologies – BSZ088N03LS G Specifications

IPI032N06N3 G BSZ088N03LS G
Model Number
IPI032N06N3 G BSZ088N03LS G
Model Name
Infineon Technologies IPI032N06N3 G Infineon Technologies BSZ088N03LS G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TO-262-3 MOSFETs ROHS 30V 50A 7.3mΩ@10V,20A 35W 2.2V@250uA 1PCSPChannel DFN-8(3.3x3.3) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-262-3 DFN-8(3.3x3.3)
Package / Arrange
Tube-packed Tape & Reel (TR)
Battery
No No
ECCN
- EAR99
Drain Source Voltage (Vdss)
- 30V
Continuous Drain Current (Id)
- 50A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 7.3mΩ@10V,20A
Power Dissipation (Pd)
- 35W
Gate Threshold Voltage (Vgs(th)@Id)
- 2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds)
- 25pF@15V
Type
- 1PCSPChannel
Input Capacitance (Ciss@Vds)
- 1.3nF@15V
Total Gate Charge (Qg@Vgs)
- 7.5nC@0~4.5V

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