| Model Number |
| IPI032N06N3 G |
IPB100P03P3L-04 |
| Model Name |
| Infineon Technologies IPI032N06N3 G |
Infineon Technologies IPB100P03P3L-04 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-262-3 MOSFETs ROHS |
30V 100A 200W 4.3mΩ@80A,10V 2.1V@475uA 1PCSPChannel TO-263-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-262-3 |
TO-263-3 |
| Package / Arrange |
| Tube-packed |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
30V |
| Continuous Drain Current (Id) |
| - |
100A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
4.3mΩ@80A,10V |
| Power Dissipation (Pd) |
| - |
200W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
2.1V@475uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSPChannel |
| Input Capacitance (Ciss@Vds) |
| - |
9.3nF@25V |
| Total Gate Charge (Qg@Vgs) |
| - |
200nC@10V |
