Model Number |
IPI032N06N3 G |
IPD350N06LGBTMA1 |
Model Name |
Infineon Technologies IPI032N06N3 G |
Infineon Technologies IPD350N06LGBTMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
TO-262-3 MOSFETs ROHS |
60V 29A 68W 35mΩ@29A,10V 2V@28uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.500 grams / 0.017637 oz |
Package / Case |
TO-262-3 |
TO-252-3 |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
- |
EAR99 |
Drain Source Voltage (Vdss) |
- |
60V |
Continuous Drain Current (Id) |
- |
29A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
- |
35mΩ@29A,10V |
Power Dissipation (Pd) |
- |
68W |
Gate Threshold Voltage (Vgs(th)@Id) |
- |
2V@28uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
- |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
- |
800pF@30V |
Total Gate Charge (Qg@Vgs) |
- |
13nC@5V |