Compare Infineon Technologies – IPI032N06N3 G vs Infineon Technologies – IPD50R399CPATMA1 Specifications

IPI032N06N3 G IPD50R399CPATMA1
Model Number
IPI032N06N3 G IPD50R399CPATMA1
Model Name
Infineon Technologies IPI032N06N3 G Infineon Technologies IPD50R399CPATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
TO-262-3 MOSFETs ROHS 500V 9A 83W 399mΩ@4.9A,10V 3.5V@330uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-262-3 TO-252-3-313
Package / Arrange
Tube-packed Tape & Reel (TR)
Battery
No No
ECCN
- EAR99
Drain Source Voltage (Vdss)
- 500V
Continuous Drain Current (Id)
- 9A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 399mΩ@4.9A,10V
Power Dissipation (Pd)
- 83W
Gate Threshold Voltage (Vgs(th)@Id)
- 3.5V@330uA
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
- 1PCSNChannel
Input Capacitance (Ciss@Vds)
- 890pF@100V
Total Gate Charge (Qg@Vgs)
- 23nC@10V

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