| Model Number |
| IPI032N06N3 G |
IPG20N04S409AATMA1 |
| Model Name |
| Infineon Technologies IPI032N06N3 G |
Infineon Technologies IPG20N04S409AATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-262-3 MOSFETs ROHS |
40V 20A 54W 8.6mΩ@17A,10V 4V@22uA 2 N-Channel TDSON-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-262-3 |
TDSON-8 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
40V |
| Continuous Drain Current (Id) |
| - |
20A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
8.6mΩ@17A,10V |
| Power Dissipation (Pd) |
| - |
54W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
4V@22uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
2 N-Channel |
| Input Capacitance (Ciss@Vds) |
| - |
2.25nF@25V |
| Total Gate Charge (Qg@Vgs) |
| - |
28nC@10V |
