| Model Number |
| IPI032N06N3 G |
IPI029N06N |
| Model Name |
| Infineon Technologies IPI032N06N3 G |
Infineon Technologies IPI029N06N |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-262-3 MOSFETs ROHS |
60V 136A 2.7mΩ@10V,100A 136W 2.8V@75uA 1PCSNChannel TO-262-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-262-3 |
TO-262-3 |
| Package / Arrange |
| Tube-packed |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| - |
- |
| Drain Source Voltage (Vdss) |
| - |
60V |
| Continuous Drain Current (Id) |
| - |
136A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
2.7mΩ@10V,100A |
| Power Dissipation (Pd) |
| - |
136W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
2.8V@75uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
39pF@30V |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
4.1nF@30V |
| Total Gate Charge (Qg@Vgs) |
| - |
56nC@0~10V |
