| Model Number |
| IPI032N06N3 G |
IRF640NLPBF |
| Model Name |
| Infineon Technologies IPI032N06N3 G |
Infineon Technologies IRF640NLPBF |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-262-3 MOSFETs ROHS |
200V 18A 150mΩ@11A,10V 150W 4V@250uA 1PCSNChannel TO-262-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
2.570 grams / 0.090654 oz |
| Package / Case |
| TO-262-3 |
TO-262-3 |
| Package / Arrange |
| Tube-packed |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
200V |
| Continuous Drain Current (Id) |
| - |
18A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
150mΩ@11A,10V |
| Power Dissipation (Pd) |
| - |
150W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
- |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
1.16nF@25V |
| Total Gate Charge (Qg@Vgs) |
| - |
67nC@10V |
